| PART |
Description |
Maker |
| 2SC3792 |
NPN Epitaxial Planar Silicon Transistor High hFE, Low Frequency General-Purpose Amp Applications
High-hFE, Low-Frequency General-Purpose Amp Applications
|
Sanyo Semicon Device
|
| 2SC3650 |
High-hFE/ Low-Frequency General-Purpose Amp Applications
High-hFE, Low-Frequency General-Purpose Amp Applications
|
Sanyo Semicon Device
|
| 2SA1434 |
High-hFE, Low-Frequency General-Purpose Amp Applications
|
SANYO[Sanyo Semicon Device]
|
| 2SC3068 |
High-hFE, Low-Frequency General-Purpose Amp Applications
|
SANYO[Sanyo Semicon Device]
|
| 2SC3069 |
High-hFE, Low-Frequency General-Purpose Amp Applications
|
SANYO[Sanyo Semicon Device]
|
| 2SC3070 |
NPN Epitaxial Planar Silicon Transistor High hFE Low-Frequency General-Purpose Amplifier Applications
|
SANYO
|
| 2SA1586 |
High voltage and high current. Excellent hFE linearity. High hFE. Small package.
|
TY Semiconductor Co., Ltd
|
| 2SC2712 |
High voltage and high current: VCEO = 50 V, IC = 150 mA (max) High hFE: hFE = 70 700
|
TY Semiconductor Co., Ltd
|
| GM9014 |
Excellent HFE Linearity HFE : HFE(0.1mA)/ hFE(2mA)=0.95(Typ.)
|
Guilin Strong Micro-Electronics Co., Ltd.
|
| GM9015 |
Excellent HFE Linearity HFE : hFE(0.1mA)/ hFE(2mA)=0.95(Typ.)
|
Guilin Strong Micro-Electronics Co., Ltd.
|
| GM9013 |
Excellent HFE Linearity HFE hFE(2)=25(Min.) at VCE=6V,Ic=400mA
|
Guilin Strong Micro-Electronics Co., Ltd.
|
| UPC1658G UPC1658G-E1 |
RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
Low Noise, High Frequncy Si MMIC Amplifier(低噪声高频率放大
LOW NOISE/ HIGH FREQUENCY Si MMIC AMPLIFIER
LOW NOISE, HIGH FREQUENCY Si MMIC AMPLIFIER
LOW NOISE HIGH FREQUENCY Si MMIC AMPLIFIER
|
NEC Corp.
NEC[NEC]
|
